In-plane shaped GaAs/AlGaAs modulation-doped structures: physics and applications for THz/subTHz Sensing

Abstract

up to 2.5 THz at room temperature. We consider design's effect on the increase of the sensitivity, and discuss noise properties of the diodes. Applying finite-difference-time modeling within the THz range and a phenomenological approach we elucidate the operation principles of the device. Finally, we compare the features of the 2DEG-bow-tie diodes with other relevant devices and discuss their possible commercial applications.