Simple microwave technique for non-destructive testing electrical properties of magnetized materials

Abstract

New technologies allow obtain low-dimensional structures, thin films, monocrystal samples of modern semiconductor materials. Electrical parameters of semiconductor materials should be tested by non-destructive simple methods to provide the high quality of new electronic devices. The principle of operation of proposed microwave meter is based on magnetic vortex oscillation and magnetoplasmic wave excitation technique in semiconductors placed in strong magnetic field B. A high frequency field b is interacted with charge carriers of semiconductor sample and contactless measurements of density N and mobility μ of free charge carriers of semiconductors can be realized. Microwave technique for non-destructive testing electrical properties of semiconductor materials is described. Simple microwave meter consists of constant magnetic field source, high frequency generator, transmitting-receiving antenna and indicator. In semiconductor specimen placed in constant and alternating magnetic fields a vortex current and magnetoplasmic microwave are excited. The response signals are measured to find a value of density N and mobility μ of free charge carriers in testing materials. Experimental parameters of measureded n-InSb, CdHgTe, BiSb specimens are presented.