Investigation of heterostructure formed from hole- and electron-doped lanthanum manganites

Abstract

High crystalline quality films of n-La2/3Ce1/3MnO3, p-La2/3Ca1/3MnO3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La2/3Ce1/3Mn O3/La2/3Ca1/3MnO3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.