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Investigation of heterostructure formed from hole- and electron-doped lanthanum manganites

dc.contributor.authorVengalis, Bonifacas
dc.contributor.authorRosa, A.M
dc.contributor.authorDevenson, Jelena
dc.contributor.authorŠliužienė, Kristina
dc.contributor.authorLisauskas, Vaclovas
dc.contributor.authorOginskis, Antanas Kleopas
dc.contributor.authorAnisimovas, Fiodoras
dc.contributor.authorPyragas, Vytautas Pranas
dc.date.accessioned2023-09-18T19:38:24Z
dc.date.available2023-09-18T19:38:24Z
dc.date.issued2005
dc.identifier.issn0587-4246
dc.identifier.other(BIS)VGT02-000012166
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/141699
dc.description.abstractHigh crystalline quality films of n-La2/3Ce1/3MnO3, p-La2/3Ca1/3MnO3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La2/3Ce1/3Mn O3/La2/3Ca1/3MnO3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.eng
dc.format.extentp. 290-293
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyConference Proceedings Citation Index - Science (Web of Science)
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.relation.isreferencedbyCIRS
dc.relation.isreferencedbyINSPEC
dc.relation.isreferencedbyCompendex
dc.relation.isreferencedbyChemical abstracts
dc.relation.isreferencedbyGeoRef
dc.source.urihttp://przyrbwn.icm.edu.pl/APP/PDF/107/a107z214.pdf
dc.titleInvestigation of heterostructure formed from hole- and electron-doped lanthanum manganites
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.accessRightsIDS Number: 901UT
dcterms.references5
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionVilniaus Gedimino technikos universitetas Puslaidininkių fizikos institutas
dc.contributor.institutionUniversity of Lisbon
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.enOptical-properties
dc.subject.enFilms
dcterms.sourcetitleActa Physica Polonica A. Part II, Proceedings of the 12th International Symposiums on Ultrafast Phenomena in Semiconductors (12-UFPS), Vilnius, Lithuania, August 22-25, 2004
dc.description.issueno. 2
dc.description.volumeVol. 107
dc.publisher.namePolish Academy of Sciences
dc.publisher.cityWarszawa
dc.identifier.doiLBT02-000013818
dc.identifier.doi000227308300014
dc.identifier.elaba3732830


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