Microwave detectors based on porous silicon
Data
2006Autorius
Ašmontas, Steponas
Gradauskas, Jonas
Zagadskij, Viktor
Stupakova, Jolanta
Sužiedėlis, Algirdas
Šatkovskis, Eugenijus
Metaduomenys
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Two types of structures comprising porous silicon (por-Si) layers between metal electrodes were prepared, which possessed nonlinear (A type) and linear (B type) current–voltage characteristics. The exposure to microwave radiation leads to the appearance of an emf between electrodes. The B-type structures exhibit high voltage responsivity and can be used as microwave radiation sensors.