Cyclotron and dimensional resonances in magnetized semiconductor plasma

Abstract

The interaction of electromagnetic waves with solid-state free-carrier plasmas is analyzed. Radio frequency helicon waves will propagate in solid-state plasma when a strong magnetic field is applied. In our experiments the time-varying magnetic field b is being used for excitation of helicons. It is shown that in the case of modulated field along with the helicon waves the cyclotron frequency oscillations exist in the semiconductor plasma specimen. The measurement of cyclotron resonance frequency f, (1) where q is the elementary charge, m is the mass of free-carrier and B is magnetic induction, provides an opportunity to determine the masses of electrons and/or holes in solid-state plasma of semiconductors. A radio frequency field b is interacted with free-carriers of semiconductor sample and dimensional resonances of helicon waves and contactless measurements of density N and mobility μ of free charge carriers of semiconductors can be realized. Microwave technique for non-destructive testing electrical properties of semiconductor materials is described. Experimental parameters of measured n-InSb, CdxHg1-xTe specimens are presented.