Simple microwave technique for non-destructive testing of electrical properties of magnetized materials

Abstract

New technologies allow obtain low-dimensional structures, thin lms, mono crystal samples of mo dern semi-conductor materials. Electrical parameters of semiconductors should b e tested by non-destructive simple metho ds to provide the high quality of new electronic devices. The principle of op eration of prop osed compact microwave meter is based on magnetic vortex oscillation and magnetoplasmic wave excitation technique in semiconductors placed in strong magnetic eld. A high frequency eld is interacting with charge carriers of semiconductor sample and contactless measurements of density N and mobility of free charge carriers of semiconductors can b e realized. Microwave technique for non-destructive testing electrical prop erties of semiconductor materials is described. Sim- ple microwave meter consists of constant magnetic eld source, high frequency generator, transmitting-receiving antenna and indicator. In semiconductor specimen placed in constant and alternating magnetic elds a vortex current and magnetoplasmic microwave are excited. The resp onse signals are measured to nd a value of density N and mobility of free charge carriers in testing materials. Experimental parameters of measured n -InSb, CdHgTe, BiSb specimens are presented.