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dc.contributor.authorSamuolienė, Neringa
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorManeikis, Andrius
dc.contributor.authorTreideris, Marius
dc.date.accessioned2023-09-18T20:09:29Z
dc.date.available2023-09-18T20:09:29Z
dc.date.issued2014
dc.identifier.issn0277-786X
dc.identifier.other(BIS)VGT02-000029434
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/147339
dc.description.abstractWe propose a new fast technique to determine thermal conductivity of a nanostructured material and demonstrate it for porous silicon. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and analysis of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we obtain the value of 35 W m -1 K -1 what is in good agreement with the results of other investigations The method can be easily applied for any other porous or otherwise structured low-dimensional materials.eng
dc.formatPDF
dc.format.extentp. [1-5]
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyConference Proceedings Citation Index - Science (Web of Science)
dc.source.urihttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1919884
dc.subjectFM02 - Energijos šaltinių medžiagos ir technologijos / Materials and technologies of energy sources
dc.titleDynamical study of thermal conducti vity of nanostructured layers by use of the photoinduced transient thermoelectric effect
dc.typeStraipsnis konferencijos darbų leidinyje Web of Science DB / Paper in conference publication in Web of Science DB
dcterms.accessRightsStraipsnio santrauka įr. nr. 28900, šaltinyje: Advanced optical materials and devices (AOMD-8) : 8th international conference, Riga, Latvia, August 25-27, 2014 : book of abstracts
dcterms.references9
dc.type.pubtypeP1a - Straipsnis konferencijos darbų leidinyje Web of Science DB / Article in conference proceedings Web of Science DB
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.institutionVilniaus Gedimino technikos universitetas Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldT 008 - Medžiagų inžinerija / Material engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltspecializationsL104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies
dc.subject.enPorous silicon
dc.subject.enThermal conductivity
dc.subject.enTransient thermoelectric effect
dc.subject.enRelaxation time
dcterms.sourcetitleEighth International Conference on Advanced Optical Materials and Devices (AOMD-8), Riga, Latvia, August 25, 2014 : proceedings of SPIE
dc.description.volumeVol. 9421
dc.publisher.nameSPIE
dc.publisher.cityRiga, Latvia
dc.identifier.doi10.1117/12.2083576
dc.identifier.elaba4102572


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