Phase and attenuation characteristics of models of GaAs semiconductor waveguides in case of two layers

Abstract

Models of open cylindrical multilayer semiconductor-anisotropic-semiconductor and dielectric-anisotropic-semiconductor waveguides are presented in this paper. We have selected n-GaAs semiconductor and TM-15 dielectric as a core of the presented waveguides. Anisotropic TM-15 and Rb 1-x (ND 4 )D 2 PO 4 dielectrics and n-InAs 1-x Sb x semiconductor we used for the external layers of waveguides. The influence of different core materials and temperature to the waves phase characteristics and attenuation was evaluated. Differential Maxwell's equations, coupled mode, and boundary condition methods were used during the investigation. The density of electrons was constant and equal to $N = 5\cdot 10^{19} \mathrm{m}^{-3}$ during all investigations. The temperature has varied in the range of 125–200 K. Results have showed that material of the core, external layers and temperature has a big impact on the phase and attenuation characteristics of the waveguide and these types of waveguides could be used in the manufacture of phase shifters and attenuators.