Morphology and photoluminescence of anodially grown porous layers on some Ga-V compounds

Abstract

Single crystalline p-type Ga-V (V=As, Sb) layers were made porous by anodical etching in fluorhydric acid solution. The morphology, chemical composition and optical properties of porous layers were investigated. Photoluminescence band in the visible range was explained by charge carrier quantum confinement in nanocrystalline particles of the initial material.