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Morphology and photoluminescence of anodially grown porous layers on some Ga-V compounds

dc.contributor.authorBendorius, Rimgaudas Adolfas
dc.contributor.authorJasutis, Vytautas
dc.contributor.authorKavaliauskas, Julius
dc.contributor.authorPačebutas, Vaidas
dc.contributor.authorSabataitytė, Julija
dc.contributor.authorŠimkienė, Irena
dc.contributor.authorTvardauskas, Henrikas
dc.contributor.authorBaranov, A.
dc.date.accessioned2023-09-18T20:19:12Z
dc.date.available2023-09-18T20:19:12Z
dc.date.issued2002
dc.identifier.issn0255-5476
dc.identifier.other(BIS)LBT02-000000073
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/148713
dc.description.abstractSingle crystalline p-type Ga-V (V=As, Sb) layers were made porous by anodical etching in fluorhydric acid solution. The morphology, chemical composition and optical properties of porous layers were investigated. Photoluminescence band in the visible range was explained by charge carrier quantum confinement in nanocrystalline particles of the initial material.eng
dc.format.extentp. 67-70
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyCompendex
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.titleMorphology and photoluminescence of anodially grown porous layers on some Ga-V compounds
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references9
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionUniversité Montpellier II
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.enPorous materials
dc.subject.enMorphology
dc.subject.enPhotoluminescence silicon
dcterms.sourcetitleMaterials science forum
dc.description.volumeVol. 384-385
dc.identifier.doiVGT02-000003004
dc.identifier.doi000174536100012
dc.identifier.elaba5083605


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