Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

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Date
2002
Author
Sabataitytė, Julija
Šimkienė, Irena
Bendorius, Rimgaudas Adolfas
Grigoras, Kęstutis
Jasutis, Vytautas
Pačebutas, Vaidas
Tvardauskas, Henrikas
Naudžius, K.
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Abstract
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga2O3, As2O3, As2O5 and GaAs submicron grains. Photoluminescence spectra of investigated porous layers consist of "infrared" and "green" spectral structures. The observed short wavelength photoluminescence (PO at 590-778 nm of the porous layer is explained by the quantum size effect in the GaAs nanocrystals.
Issue date (year)
2002
URI
https://etalpykla.vilniustech.lt/handle/123456789/148782
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