Dilute bismides for terahertz optoelectronic applications

Abstract

New materials - dilute group III bismides are shown to be a proper choice for numerous applications in terahertz and mid-infrared range optoelectronic devices. Their main advantage is rapid reduction of the energy bandgap with increasing bismuth composition, which allows to reach interband transitions wavelengths of 1.55 μm for the layers grown on GaAs substrates and 6 μm for lattice-matched with InP layers even in alloys with a relatively small Bi-content. This contribution reviews most recent achievements in applying dilute bismides for THz radiation generation and coherent detection.