Krūvininkų kaitimo kinetikos įtaka sudėtinio fotomagnetoelektrinio efekto impulsinio fotoatsako dažnių spektrui

Abstract

The influence of the parameters determined by carrier heating kinetic on the pulsed multiple photomagnetoelectric response frequency spectra in strongy excited semiconductors have been investigated. The discrete Fourier transform procedure has been applied to the photoresponse analysis. The possibility to quide the generation of high frequencies (including teraherz) have been revealed at picoseconds laser excitation of semiconductors.