Akytojo silicio ir aliuminio darinių atsakas superaukšto dažnio elektriniame lauke

Abstract

Response of aluminun/porous silicon structures, Al/p-PS and additionally boron doped Al/p(+)-PS, exposed to 10 GHz microwave radiation have been under investigation. Hot carrier phenomenon is proposed to be responsible for the emf formation across the surface and inlying potential barriers of the structures.