Akytojo silicio ir aliuminio darinių atsakas superaukšto dažnio elektriniame lauke
Data
2005Autorius
Česnys, Antanas
Gradauskas, Jonas
Stupakova, Jolanta
Sužiedėlis, Algirdas
Šatkovskis, Eugenijus
Metaduomenys
Rodyti detalų aprašąSantrauka
Response of aluminun/porous silicon structures, Al/p-PS and additionally boron doped Al/p(+)-PS, exposed to 10 GHz microwave radiation have been under investigation. Hot carrier phenomenon is proposed to be responsible for the emf formation across the surface and inlying potential barriers of the structures.