Gated bow-tie diode with selectively doped 2DEG active layer for microwave sensing

Abstract

Experimental studies of novel design microwave sensors based on selectively doped semiconductor structure of asymmetrical shape revealed that the gated bow-tie diodes are proper candidates for detection of electromagnetic radiation in millimeter wave range. Location of the gate over the active layerof the diode influences its electrical and detection properties as well as polarity of the detected voltage. Addition of the gate makes the asymmetry of the bow-tie diode’s I-V characteristic more pronounced, what in turn results in higher voltage sensitivity value. If the gate is located by the wide contact, the sensitivity raises by one order of magnitude. When the gate is located at the narrow contact, the voltage sensitivity increases almost by two orders of magnitude in respect to the ungateddiode.