dc.contributor.author | Anbinderis, Maksimas | |
dc.contributor.author | Ašmontas, Steponas | |
dc.contributor.author | Gradauskas, Jonas | |
dc.contributor.author | Sužiedėlis, Algirdas | |
dc.contributor.author | Derkach, Vadim | |
dc.contributor.author | Golovashchenko, Roman | |
dc.date.accessioned | 2023-09-18T20:34:43Z | |
dc.date.available | 2023-09-18T20:34:43Z | |
dc.date.issued | 2020 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/151030 | |
dc.description.abstract | Experimental studies of novel design microwave sensors based on selectively doped semiconductor structure of asymmetrical shape revealed that the gated bow-tie diodes are proper candidates for detection of electromagnetic radiation in millimeter wave range. Location of the gate over the active layerof the diode influences its electrical and detection properties as well as polarity of the detected voltage. Addition of the gate makes the asymmetry of the bow-tie diode’s I-V characteristic more pronounced, what in turn results in higher voltage sensitivity value. If the gate is located by the wide contact, the sensitivity raises by one order of magnitude. When the gate is located at the narrow contact, the voltage sensitivity increases almost by two orders of magnitude in respect to the ungateddiode. | eng |
dc.format | PDF | |
dc.format.extent | p. 907-911 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | IEEE Xplore | |
dc.relation.isreferencedby | Scopus | |
dc.rights | Laisvai prieinamas internete | |
dc.source.uri | https://ieeexplore.ieee.org/xpl/conhome/9252560/proceeding?pageNumber=9 | |
dc.source.uri | https://talpykla.elaba.lt/elaba-fedora/objects/elaba:75242294/datastreams/MAIN/content | |
dc.subject | H600 - Elektronikos ir elektros inžinerija / Electronic and electrical engineering | |
dc.title | Gated bow-tie diode with selectively doped 2DEG active layer for microwave sensing | |
dc.type | Straipsnis konferencijos darbų leidinyje Scopus DB / Paper in conference publication in Scopus DB | |
dcterms.references | 21 | |
dc.type.pubtype | P1b - Straipsnis konferencijos darbų leidinyje Scopus DB / Article in conference proceedings Scopus DB | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.institution | O.Ya. Usikov Institute for Radio Physics and Electronics, Kharkiv | |
dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.studydirection | C02 - Fizika / Physics | |
dc.subject.vgtuprioritizedfields | IK0202 - Išmaniosios signalų apdorojimo ir ryšių technologijos / Smart Signal Processing and Telecommunication Technologies | |
dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
dc.subject.en | sensitivity | |
dc.subject.en | bow-tie diod | |
dc.subject.en | gate | |
dc.subject.en | thermoelectric electromotive force | |
dc.subject.en | hot carriers | |
dc.subject.en | selectively doped semiconductor structure | |
dc.subject.en | microwave | |
dcterms.sourcetitle | 2020 IEEE Ukrainian Microwave Week (UkrMW) Kharkiv, Ukraine, September 21-25, 2020 | |
dc.publisher.name | IEEE | |
dc.publisher.city | Piscataway, NJ | |
dc.identifier.elaba | 75242294 | |