dc.contributor.author | Anbinderis, Maksimas | |
dc.contributor.author | Ašmontas, Steponas | |
dc.contributor.author | Čerškus, Aurimas | |
dc.contributor.author | Gradauskas, Jonas | |
dc.contributor.author | Lučun, Andžej | |
dc.contributor.author | Šilėnas, Aldis | |
dc.contributor.author | Sužiedėlis, Algirdas | |
dc.date.accessioned | 2023-09-18T20:45:07Z | |
dc.date.available | 2023-09-18T20:45:07Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 1424-8220 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/152328 | |
dc.description.abstract | The article presents results of experimental studies of dc and high frequency electrical character-istics of planar microwave diodes fabricated on the base of n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3) epitaxially grown on semi-insulating GaAs substrate. The diodes can serve as reliable and inex-pensive sensors of microwave radiation in millimeter wavelength range, and sense electro-magnetic radiation directly without any external bias voltage at room temperature. Investiga-tion revealed strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in case of GaAs based diodes (x = 0), and it substantially increases reaching hundreds of volts per watt in case of higher x values. Also, a model enabling to forecast the responsivity of the sensor in other frequency ranges is proposed. | eng |
dc.format | PDF | |
dc.format.extent | p. 1-17 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.relation.isreferencedby | Scopus | |
dc.relation.isreferencedby | DOAJ | |
dc.rights | Laisvai prieinamas internete | |
dc.source.uri | https://doi.org/10.3390/s21134487 | |
dc.source.uri | https://talpykla.elaba.lt/elaba-fedora/objects/elaba:98935640/datastreams/MAIN/content | |
dc.title | Sensitive planar microwave diode on the base of ternary AlxGa1-xAs semiconductor compound | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.accessRights | This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/) | |
dcterms.license | Creative Commons – Attribution – 4.0 International | |
dcterms.references | 39 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
dc.contributor.faculty | Mechanikos fakultetas / Faculty of Mechanics | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.studydirection | C02 - Fizika / Physics | |
dc.subject.studydirection | E09 - Elektronikos inžinerija / Electronic engineering | |
dc.subject.vgtuprioritizedfields | AE0404 - Atsinaujinanti energija / Renewable energy | |
dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
dc.subject.en | planar diode | |
dc.subject.en | microwave sensor | |
dc.subject.en | voltage responsivity | |
dc.subject.en | aluminum gallium arsenide | |
dcterms.sourcetitle | Sensors | |
dc.description.issue | iss. 13 | |
dc.description.volume | vol. 21 | |
dc.publisher.name | MDPI | |
dc.publisher.city | Basel | |
dc.identifier.doi | 000671340100001 | |
dc.identifier.doi | 10.3390/s21134487 | |
dc.identifier.elaba | 98935640 | |