Sensitive planar microwave diode on the base of ternary AlxGa1-xAs semiconductor compound
Peržiūrėti/ Atidaryti
Data
2021Autorius
Anbinderis, Maksimas
Ašmontas, Steponas
Čerškus, Aurimas
Gradauskas, Jonas
Lučun, Andžej
Šilėnas, Aldis
Sužiedėlis, Algirdas
Metaduomenys
Rodyti detalų aprašąSantrauka
The article presents results of experimental studies of dc and high frequency electrical character-istics of planar microwave diodes fabricated on the base of n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3) epitaxially grown on semi-insulating GaAs substrate. The diodes can serve as reliable and inex-pensive sensors of microwave radiation in millimeter wavelength range, and sense electro-magnetic radiation directly without any external bias voltage at room temperature. Investiga-tion revealed strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in case of GaAs based diodes (x = 0), and it substantially increases reaching hundreds of volts per watt in case of higher x values. Also, a model enabling to forecast the responsivity of the sensor in other frequency ranges is proposed.