Adaptability of majority carrier concentration permanence assumption in modelling of the p-n junction-based semiconductor devices

Abstract

The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the p-n junction-based semiconductor devices. The particular silicon p-n junctions have been analyzed using derived equations.