Electric field distributions in the cross-sections of the SiC hollow-core waveguides

Abstract

The SiC material can be used in wide area of applications. Silicon is the material that dominates in the electronics industry today. A change of technology from silicon to silicon carbide is going to revolutionize the power electronics. So the SiC power devices are beginning to be commercialized nowadays. Hollow-core (HC) waveguides have excellent properties. For instance, HC waveguides can be used for high power lasers, no end reflections and small beam divergence. We have investigated a hollow-core cylindrical SiC waveguide. The investigations were made at different temperatures. The permittivity of the SiC material depends on the temperature. The values of temperatures were taken from the study conducted by T. A. Baeraky (2002). We have calculated the dispersion characteristics and the electric field distributions of the hollow-core SiC waveguide with radius r = 1 mm. It should be accented that all our calculations were made taking into account waveguide material losses.