Siauros draustinės juostos puslaidininkiai intensyvaus fotosužadinimo sąlygomis
Abstract
The main results of the narrrow-gap semiconductors InAs, InSb and CdxHg1-xTe investigations under intense pused laser light excitation is summarised.[.......].
Browse
All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjects / KeywordsInstitutionFacultyDepartment / InstituteTypeSourcePublisherType (PDB/ETD)Research fieldStudy directionVILNIUS TECH research priorities and topicsLithuanian intelligent specializationThis CollectionBy Issue DateAuthorsTitlesSubjects / KeywordsInstitutionFacultyDepartment / InstituteTypeSourcePublisherType (PDB/ETD)Research fieldStudy directionVILNIUS TECH research priorities and topicsLithuanian intelligent specialization