The model of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage

Abstract

The equation of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage is proposed and examined. The analysis of equation leads to the new conclusions about the behaviour of the junction, which in the general case contradict the propositions presented in a good many of books dedicated to semiconductor devices.