Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

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Date
2014
Author
Sužiedėlis, Algirdas
Ašmontas, Steponas
Gradauskas, Jonas
Nargelienė, Viktorija
Čerškus, Aurimas
Lučun, Andžej
Anbinderis, Tomas
Papsujeva, Irina
Narkūnas, Aleksandras
Kundrotas, Benas
Rinkevičienė, Roma
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Abstract
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured.
Issue date (year)
2014
URI
https://etalpykla.vilniustech.lt/handle/123456789/146163
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