Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover
Peržiūrėti/ Atidaryti
Data
2014Autorius
Sužiedėlis, Algirdas
Ašmontas, Steponas
Gradauskas, Jonas
Nargelienė, Viktorija
Čerškus, Aurimas
Lučun, Andžej
Anbinderis, Tomas
Papsujeva, Irina
Narkūnas, Aleksandras
Kundrotas, Benas
Rinkevičienė, Roma
Metaduomenys
Rodyti detalų aprašąSantrauka
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured.