Influence of pulsed laser radiation on electrical and magnetoresistive properties of La2/3Sr1/3MnO3 films

Abstract

We report modification of electrical and magnetoresistance properties for the La2/3Sr1/3MnO3/MgO(100) thin films influenced by high power pulsed (τ=10 ns) laser radiation (λ=532 nm) SEM surface study revealed cracks extended along [100] directions and partially melted material at film surface with radiation power increasing. Low field magnetoresistance typical for high quality intergrain junctions has been measured at T < 240 K for the films with laser beam-induced cracks while partial melting of the material resulted increased electrical resistance, lowering of the paramagnetic to ferromagnetic transition temperature Tc and reduced magnetoresistance values in the vicinity of Tc.