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    • Physical Analysis of Lateral-BTBT Induced GIDL Current in GaN-Based FinFET Devices 

      Singh Rajawat, Vandana; Kumar, Ajay; Choudhary, Bharat (2024 IEEE Open Conference of Electrical, Electronic and Information Sciences (eStream), April 25, 2024, Vilnius, Lithuania, 2024)
      In this paper, we have analyzed the behavior of the Lateral-BTBT component of gate-induced drain leakage (GIDL) current on various configurations of GaN FinFET with High-k oxide which are Bulk-GaN FinFET, JAM-GaN FinFET ...