Growth and characterization of UTC photo-diodes containing GaAs1-xBix absorber layer

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Date
2014
Author
Geižutis, Andrejus
Pačebutas, Vaidas
Butkutė, Renata
Svidovsky, Polina
Strazdienė, Viktorija
Krotkus, Arūnas
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Abstract
Uni-Travelling-Carrier Photo-Diodes (UTC-PD) with GaAs1 xBix absorber layer have been fabricated and characterized. Two UTC-PD structures with and without a cliff layer between the absorber and collector were investigated. The spectral sensitivity dependences are similar for both UTC-PDs and are reaching the wavelength of 1.3 lm. Photosensitivity of structure with a cliff was one order of magnitude larger than that of the device without it.
Issue date (year)
2014
URI
https://etalpykla.vilniustech.lt/handle/123456789/147010
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