Growth and characterization of UTC photo-diodes containing GaAs1-xBix absorber layer
Santrauka
Uni-Travelling-Carrier Photo-Diodes (UTC-PD) with GaAs1 xBix absorber layer have been fabricated and characterized. Two UTC-PD structures with and without a cliff layer between the absorber and collector were investigated. The spectral sensitivity dependences are similar for both UTC-PDs and are reaching the wavelength of 1.3 lm. Photosensitivity of structure with a cliff was one order of magnitude larger than that of the device without it.