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Design and Analysis of a Wide Input Voltage Range Low-Dropout Regulator in TSMC 180nm BCD Technology

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Date
2025
Author
Šalavėjus, Lukas
Barzdėnas, Vaidotas
Vasjanov, Aleksandr
Lee, Tzung-Je
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Abstract
This paper presents the design and simulation of a low-dropout (LDO) linear voltage regulator intended for integration in high-voltage DC-DC converter systems. Implemented in a 180 nm BCD CMOS process, the proposed LDO supports an input voltage range of 8 V to 60 V and provides a regulated 5 V output with up to 20 mA load current. A custom three-stage error amplifier is introduced, combining low-voltage signal processing with high-voltage interfacing, while a self-biased startup circuit ensures reliable operation across process, voltage, and temperature (PVT) variations. The LDO achieves a worst-case quiescent current of 95.5 µA at 60 V input and 125 °C, and demonstrates excellent line and load regulation of 0.075 mV/V and 0.215 mV/mA, respectively. Power supply rejection reaches –60 dB at 1 kHz under nominal conditions. Compared with recent state-of-the-art designs, this work achieves a favorable balance of wide input range, regulation precision, and power efficiency, making it well suited for analog and digital internal supply rails in automotive and industrial applications.
Issue date (year)
2025
Author
Šalavėjus, Lukas
URI
https://etalpykla.vilniustech.lt/handle/123456789/159715
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  • 2025 International Conference "Electrical, Electronic and Information Sciences“ (eStream) [51]

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